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United States Patent 19 11 45 Mon den Patent Number: Date of Patent: 5,047,984 Sep. 10, 1991 54 INTERNAL SYNCHRONOUS STATIC RAM 75 Inventor: June Mon den, Tokyo, Japan 73 Assignee: NEC Corporation,
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How to fill out internal synchronous static ram:

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Start by identifying the specific type of internal synchronous static ram (SRAM) that needs to be filled out. This could be a specific model or a general type of SRAM.
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Check the documentation or datasheet for the SRAM to understand the required input format and timing requirements. This information is crucial to ensure proper functioning of the SRAM.
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Connect the address lines of the SRAM to the appropriate addressing scheme. This could involve connecting the address lines to a memory controller or inputting the specific addresses manually.
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Set the control signals of the SRAM based on the specific instructions provided by the datasheet. These control signals can include read/write enable signals, chip select signals, and clock signals.
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Input the data that needs to be stored into the SRAM. This can be done using a memory controller, a microcontroller, or directly through the data lines of the SRAM.
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Ensure that the timing requirements for a successful write operation are met. This includes validating that the data inputs are stable before the write operation, and adhering to any required hold or setup times.

Who needs internal synchronous static ram:

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Computer system developers who require a high-speed, low-power, and reliable memory solution often opt for internal synchronous static ram (SRAM). It provides faster access times compared to dynamic random access memory (DRAM) and retains its data without the need for constant refreshing.
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High-performance applications that require rapid read/write operations, such as cache memory systems and processors, often rely on internal synchronous SRAM. It allows for fast and efficient access to frequently used data, enhancing the overall system performance.
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Embedded systems used in critical applications, such as aviation, medical devices, and automotive electronics, can benefit from internal synchronous SRAM. Its reliability, low power consumption, and capability to function across a wide range of temperatures make it suitable for these demanding environments.

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