45 GHz for a current density of 1.24 MA/oh. Power factor of efficiency can be achieved when the power is applied in series. We offer one module in 3.0 V supply range. The NE552R479A is rated for 6.4 A nominal power in the 2.45 GHz channel; 3 A nominal in 6.4 GHz channel; and 3.0 MA nominal in 4.0 GHz channel. The design frequency and the supply voltage are configurable. The output power and the current capacity are adjustable. Current characteristics of this device are identical to those of a MOS FET with the following differences: The silicon die used in this device has a gate drive current of about 60 MA and a reverse current of about 100 MA, rather than a typical 75 MA/oh. This MOS FET cannot be used with 488/508 ICS, and does not provide an output drive current as high as a full power MOS FET.
The silicon device is rated for operation at 2.45 GHz frequency range; it can operate in 5.25 GHz and 12.75 GHz channels. It does not require an external power supply voltage.
The silicon device is suitable for all high performance, low latency, or low noise applications. It delivers excellent stability even in a wide temperature range from 0 F to 70 F.
This silicon MOS FET is manufactured as an open-top package (OTP) that does not require a silicon gate with a metal contact area. The OTP MOS FET provides the most reliable and highest performance in the power amplifier market. DESCRIPTION OF THE DRAWINGS An illustrative example of a power amplifier IC such as NE552R479A is illustrated in the Figures. This IC is used with a 2.45 GHz transmitter, and a 2.45 GHz receiver.
FIG. 1 depicts the transceiver chip that includes NE552R479A.
FIG. 2 is a circuit diagram of the transmitter.
FIG. 3 is a schematic block diagram for a power amplifier IC that can be installed on an FET chip with a semiconducting gate.
FIG. 4 is a schematic block diagram of the power amplifier chip. The design frequency and the supply voltage are configurable.
FIG. 5 is a schematic block diagram of a power amplifier IC that can be used with a high quality DDS (dip lexer) chip.
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DATA SHEET SILICON POWER MOS FET NE552R479A 3.0 V OPERATION SILICON RF POWER LIMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R479A is an N-channel silicon power laterally
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