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This report investigates Ni/WSi/Ti/Pt Ohmic contacts to n-SiC as a function of annealing temperatures, emphasizing their performance in high power and high temperature applications. Results demonstrate
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How to fill out Improved Ni Based Composite Ohmic Contact to n-Sic for High Temperature and High Power Device Applications
01
Begin with a clean n-SiC wafer surface, ensuring no contaminants are present.
02
Prepare the Ni-based composite material by mixing appropriate ratios of nickel and other alloying elements.
03
Deposit the composite material onto the n-SiC surface using techniques such as sputtering or electron beam evaporation.
04
Perform a thermal treatment to activate the ohmic contact, typically by annealing at high temperatures under an inert atmosphere.
05
Characterize the electrical properties of the contact using methods like current-voltage measurements to ensure low-resistance characteristics.
06
Conduct reliability tests under high temperature and power conditions to validate the performance of the ohmic contact.
Who needs Improved Ni Based Composite Ohmic Contact to n-Sic for High Temperature and High Power Device Applications?
01
Researchers and engineers developing high-temperature electronics.
02
Manufacturers of high-power semiconductor devices.
03
Organizations working in the fields of power electronics and high-frequency applications.
04
Academics conducting studies on material science and device reliability.
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What is Improved Ni Based Composite Ohmic Contact to n-Sic for High Temperature and High Power Device Applications?
It is a type of contact material designed to improve electrical conductivity and thermal stability in high-temperature and high-power semiconductor devices, particularly those made from silicon carbide (SiC).
Who is required to file Improved Ni Based Composite Ohmic Contact to n-Sic for High Temperature and High Power Device Applications?
Research organizations, manufacturers, or developers working on semiconductor devices that utilize these materials may be required to file relevant documentation regarding the composition and performance of the contact.
How to fill out Improved Ni Based Composite Ohmic Contact to n-Sic for High Temperature and High Power Device Applications?
To fill out the documentation, one should provide detailed information about the material composition, processing methods, performance characteristics, and data from testing under high-temperature and high-power conditions.
What is the purpose of Improved Ni Based Composite Ohmic Contact to n-Sic for High Temperature and High Power Device Applications?
The purpose is to enhance device efficiency and reliability by ensuring low contact resistance and stability under extreme operating conditions, which are typical in high-power applications.
What information must be reported on Improved Ni Based Composite Ohmic Contact to n-Sic for High Temperature and High Power Device Applications?
Information that must be reported includes material composition, manufacturing processes, resistance measurements, thermal stability data, and any relevant performance test results.
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