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This document serves as a call for papers and registration for the 20th North American Conference on Molecular Beam Epitaxy (MBE), inviting participants to submit abstracts and attend the event.
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Molecular beam epitaxy (MBE) is a thin-film physical vapor-phase deposition technique based on the thermal evaporation of elemental sources in an ultrahigh vacuum environment. MBE has been initially developed in the early 1970s to demonstrate the growth of high-purity III-V compound semiconductors [25].
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The 20th North American Conference on Molecular Beam Epitaxy is a scientific conference focused on advancements and research in molecular beam epitaxy, a technique used to grow crystalline materials for various applications in semiconductors and nanotechnology.
Researchers, scientists, and professionals in the field of molecular beam epitaxy, as well as attendees planning to participate in the conference, may be required to file registration forms to attend and present their work.
To fill out the registration for the 20th North American Conference on Molecular Beam Epitaxy, attendees should visit the official conference website, complete the online registration form with their personal and professional details, and follow any provided instructions for payment if necessary.
The purpose of the conference is to bring together experts and researchers to share the latest findings, foster collaboration, and discuss the future directions of molecular beam epitaxy research and applications.
Participants may be required to report abstracts of their presentations, bios, affiliation details, and contributions to the conference, including any relevant research findings related to molecular beam epitaxy.
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