Fillable IRFZ34NS /L

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PD - 9.1311A IRFZ34NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount (IRFZ34NS) Low-profile through-hole (IRFZ34NL) 175 C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS 55V RDS(on) 0.040 G ID 29A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This...
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