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Photoelectrochemistry of silicon and Bismuth(III) Iodide Major Qualifying Project Report Submitted to the Faculty of WORCESTER POLYTECHNIC INSTITUTE in partial fulfillment of the requirements for
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To fill out photoelectrochemistry of n-silicon, follow these steps:
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Prepare the n-silicon sample by cleaning it thoroughly to remove any impurities or contaminants.
03
Attach the n-silicon sample to a conductive substrate or electrode using a suitable adhesive.
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Create an electrolyte solution by dissolving the desired electrolyte in a solvent.
05
Place the prepared n-silicon sample, along with the conductive substrate, into a photoelectrochemical cell or system.
06
Connect the n-silicon sample to a power supply or light source, depending on the intended experimental setup.
07
Immerse the n-silicon sample and the conductive substrate into the prepared electrolyte solution, ensuring that they are fully submerged.
08
Adjust the experimental parameters such as light intensity, potential bias, and temperature as per the requirements of the specific experiment.
09
Monitor the photoelectrochemical behavior of the n-silicon sample by measuring key parameters such as current density, open-circuit potential, and photovoltage.
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Record and analyze the obtained data to draw conclusions and insights about the photoelectrochemistry of n-silicon.
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Finally, clean and store the n-silicon sample and the photoelectrochemical cell properly for future use or analysis.

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Overall, anyone interested in understanding the fundamental aspects and applications of photoelectrochemistry can benefit from studying n-silicon.
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