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Photoelectrochemistry of silicon and Bismuth(III) Iodide Major Qualifying Project Report Submitted to the Faculty of WORCESTER POLYTECHNIC INSTITUTE in partial fulfillment of the requirements for
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To fill out photoelectrochemistry of n-silicon, follow these steps:
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Prepare the n-silicon sample by cleaning it thoroughly to remove any impurities or contaminants.
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Attach the n-silicon sample to a conductive substrate or electrode using a suitable adhesive.
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Create an electrolyte solution by dissolving the desired electrolyte in a solvent.
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Place the prepared n-silicon sample, along with the conductive substrate, into a photoelectrochemical cell or system.
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Connect the n-silicon sample to a power supply or light source, depending on the intended experimental setup.
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Immerse the n-silicon sample and the conductive substrate into the prepared electrolyte solution, ensuring that they are fully submerged.
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Adjust the experimental parameters such as light intensity, potential bias, and temperature as per the requirements of the specific experiment.
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Monitor the photoelectrochemical behavior of the n-silicon sample by measuring key parameters such as current density, open-circuit potential, and photovoltage.
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Record and analyze the obtained data to draw conclusions and insights about the photoelectrochemistry of n-silicon.
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Finally, clean and store the n-silicon sample and the photoelectrochemical cell properly for future use or analysis.
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