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QLF131FP16Preliminary C0015801 April 20151305 nm 16 mW FP LASER DIODE1. DESCRIPTION QLF131FP16 is a 1305 nm quantum dot FP laser diode chip for use in telecom and datacom applications up to 110 deg.C
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01
Prepare the substrate by cleaning it thoroughly to remove any impurities.
02
Grow the layers of InAs, GaAs, and GaInAs using molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD).
03
Create the quantum dots by carefully controlling the growth conditions to achieve the desired size and density.
04
Fabricate the laser structure by depositing the contact and cladding layers on top of the quantum dots.
05
Add electrical contacts to the laser structure to enable current injection.
06
Optimize the device parameters such as temperature and current to achieve lasing at the desired wavelength.

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Researchers and engineers working in the field of telecommunications and optical communications.
02
Manufacturers of optical transceivers and data communication equipment.
03
Scientists studying semiconductor physics and optoelectronic devices.
04
Individuals or organizations interested in developing high-performance and energy-efficient lasers for various applications.
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Long-wavelength InAsGaAs quantum-dot laser is a type of laser diode that emits light in the long-wavelength infrared region.
Manufacturers and distributors of long-wavelength InAsGaAs quantum-dot lasers are required to file.
The filing process for long-wavelength InAsGaAs quantum-dot laser typically involves completing a form with detailed information about the laser and its specifications.
The purpose of long-wavelength InAsGaAs quantum-dot laser is to provide a compact and efficient source of long-wavelength infrared light for various applications including telecommunications, sensing, and imaging.
Information that must be reported on long-wavelength InAsGaAs quantum-dot laser includes specifications such as wavelength range, output power, and temperature stability.
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