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AD774 126 MOLECULAR BEAM EPITAXY OF IVI COMPOUND WAVEGUIDES Donald L. Smith PerkinElmer CorporationPrepared for: Advanced Research Projects Agency Office of Naval Research 31 December 1973 m DISTRIBUTED
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Prepare the substrate by cleaning it thoroughly to remove any contaminants.
02
Load the substrate into the molecular beam epitaxy chamber.
03
Heat the substrate to the appropriate temperature.
04
Introduce the sources of the desired atoms or molecules into the chamber.
05
Control the deposition rate and growth conditions to achieve the desired material properties.
06
Monitor the growth process using in-situ diagnostics.
07
Repeat the deposition process as needed to build up the desired structure.
08
Cool down the substrate and remove it from the chamber.

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Molecular beam epitaxy is a technique used to grow thin films of various materials with atomic layer control.
Researchers and scientists working in the field of thin film growth and material science are required to perform molecular beam epitaxy.
To fill out molecular beam epitaxy, one must carefully design the growth parameters, load the chosen material sources into the MBE system, and monitor the growth process.
The purpose of molecular beam epitaxy is to create high-quality thin films with precise control over the atomic arrangement and layer thickness.
Information such as growth parameters, material sources, substrate type, growth temperature, and film thickness must be reported on molecular beam epitaxy forms.
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