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HITACHI GATE ARRAY 1 600Gates CMOS HD61 L Series The HD61 L is a master slice CMOS gate array using 2l ayer metal process. The HD61Lhas1,584 internal 2NAND equivalent gates, and 68 input/output buffers
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NAND gate transistor design refers to the arrangement of transistors in a configuration that produces a NAND logic gate. It typically involves using complementary metal-oxide-semiconductor (CMOS) technology, where both p-type and n-type transistors are used to implement the NAND operation.
Designers and manufacturers of integrated circuits that include NAND gate configurations are typically required to file nand gate transistor designs, ensuring compliance with relevant regulations and standards.
To fill out a nand gate transistor design, one must complete the appropriate design submission form that includes detailed specifications, schematic diagrams, and any necessary simulation results that demonstrate the functionality and performance of the NAND gate.
The purpose of nand gate transistor design is to create efficient and reliable digital logic circuits that perform the NAND function, which is fundamental in building complex logical operations within electronic systems.
Information that must be reported includes transistor types used, circuit schematics, layout designs, technology used, performance metrics, and compliance with applicable standards.
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