Medical Release Form Kentucky

pg2181t5r form
Gaas integrated circuit pg2176t5n 50 termination type high power spdt switch for wimax description the pg2176t5n is a gaas mmic 50 termination type high power spdt (single pole double throw) switch which was developed for wimax. this device can...
k band lna tr form
Hetero junction field effect transistor ne3509m04 l to s band low noise amplifier n-channel hj-fet features super low noise figure and high associated gain nf 0.4 db typ., ga 17.5 db typ. f 2 ghz, vds 2 v, id 10 ma flat-lead 4-pin thin-type super...
ne3514s02 po1db form
Hetero junction field effect transistor ne3515s02 x to ku-band super low noise amplifier n-channel hj-fet features super low noise figure, high associated gain and middle output power nf 0.3 db typ., ga 12.5 db typ. f 12 ghz, vds 2 v, id 10 ma po...
UPG2405T6Q DS
Gaas integrated circuit pg2405t6q 1 w sp3t switch description tm the pg2405t6q is an sp3t gaas fet switch which was developed for bluetooth , wireless lan and nfc. this device can operate frequency from 10 mhz to 2.5 ghz, having the low insertion...
HETERO JUNCTION FIELD EFFECT TRANSISTOR
Hetero junction field effect transistor ne3508m04 l to s band low noise amplifier n-channel hj-fet features super low noise figure and high associated gain nf 0.45 db typ., ga 14 db typ. f 2 ghz, vds 2 v, id 10 ma flat-lead 4-pin thin-type super...
NE3503M04 DS. PG10456EJ01V1DS
Hetero junction field effect transistor ne3514s02 k band super low noise amplifier n-channel hj-fet features super low noise figure and high associated gain nf 0.75 db typ., ga 10 db typ. f 20 ghz micro-x plastic (s02) package applications 20...
NE5520379A DS. PU10124EJ02V0DS
Data sheet silicon power mos fet ne552r479a 3.0 v operation silicon rf power ldmos fet for 2.45 ghz 0.4 w transmission amplifiers description the ne552r479a is an n-channel silicon power laterally diffused mos fet specially designed as the...
NESG2101M05 DS
Npn silicon germanium rf transistor nesg2101m05 npn sige rf transistor for medium output power amplification (125 mw) flat-lead 4-pin thin-type super minimold (m05) features the device is an ideal choice for medium output power, high-gain...
5 to 6
Gaas integrated circuit pg2415tk 0.5 to 6.0 ghz spdt switch description the pg2415tk is a gaas mmic spdt (single pole double throw) switch for 0.5 to 6.0 ghz applications, including dual-band wireless lan. this device operates with dual control...
Data Sheet - California Eastern Laboratories
Bipolar digital integrated circuit pb1512tu 13 ghz input divide by 8 prescaler ic for satellite communications description the pb1512tu is a silicon germanium (sige) monolithic integrated circuit designed as a divide by 8 prescaler ic for...
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