Medical Release Form Kentucky

K band lna tr form

K band lna tr form

Hetero junction field effect transistor ne3509m04 l to s band low noise amplifier n-channel jet features super low noise figure and high associated gain nf 0.4 db top., ga 17.5 db top. f 2 ghz, vs 2 v, id 10 ma flat-lead 4-pin thin-type super...

Ne3514s02 po1db form

Ne3514s02 po1db form

Hetero junction field effect transistor ne3515s02 x to husband super low noise amplifier n-channel jet features super low noise figure, high associated gain and middle output power nf 0.3 db top., ga 12.5 db top. f 12 ghz, vs 2 v, id 10 ma po...

5 to 6

Gas integrated circuit pg2415tk 0.5 to 6.0 ghz spot switch description the pg2415tk is a gas mimics pdt (single pole double throw) switch for 0.5 to 6.0 ghz applications, including dual-band wireless lan. this device operates with dual control...

NESG2101M05 DS

Npn silicon germanium rf transistor nesg2101m05 npn side rf transistor for medium output power amplification (125 mw) flat-lead 4-pin thin-type super minimal (m05) features the device is an ideal choice for medium output power, high-gain...

HETERO JUNCTION FIELD EFFECT TRANSISTOR

HETERO JUNCTION FIELD EFFECT TRANSISTOR

Hetero junction field effect transistor ne3508m04 l to s band low noise amplifier n-channel jet features super low noise figure and high associated gain nf 0.45 db top., ga 14 db top. f 2 ghz, vs 2 v, id 10 ma flat-lead 4-pin thin-type super minim...

UPG2405T6Q DS

Gas integrated circuit pg2405t6q 1 w sp3t switch description tm the pg2405t6q is an sp3t gas fet switch which was developed for bluetooth, wireless lan and nfc. this device can operate frequency from 10 mhz to 2.5 ghz, having the low insertion...

NE3503M04 DS. PG10456EJ01V1DS

NE3503M04 DS. PG10456EJ01V1DS

Hetero junction field effect transistor ne3514s02 k band super low noise amplifier n-channel jet features super low noise figure and high associated gain nf 0.75 db top., ga 10 db top. f 20 ghz micro-x plastic (s02) package applications 20...

NE5520379A DS. PU10124EJ02V0DS

NE5520379A DS. PU10124EJ02V0DS

Data sheet silicon power mos fet ne552r479a 3.0 v operation silicon rf power limos fet for 2.45 ghz 0.4 w transmission amplifiers description the ne552r479a is an n-channel silicon power laterally diffused mos fet specially designed as the...