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Este documento es una presentación sobre el MOSFET de canal largo, cubriendo características I-V, voltaje umbral, ejemplos de diseño y referencias relacionadas.
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In electronics, the metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device.
In electronics, the metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device.
A MOSFET consists of four terminals: the source, the drain, the gate and the base. Commonly the base is connected to the source terminal. The substrate, source and drain consist of either positive or negative doped semiconductors.
The power MOSFET is the most common power semiconductor device in the world, due to its low gate drive power, fast switching speed, easy advanced paralleling capability, wide bandwidth, ruggedness, easy drive, simple biasing, ease of application, and ease of repair.
The MOSFET was invented by Mohamed M. Atalla and Dawon Kahng in 1959 at Bell Labs and was first introduced in June 1960. It is a fundamental part of modern electronics and the most commonly used device in history.
The main working principle of a MOSFET is to control the voltage and the current which is flowing between the source terminal and the drain terminals. We can also say that its work is almost similar to that of a switch.
MOSFET stands for metal-oxide-semiconductor field-effect transistor. It is a field-effect transistor with a MOS structure. Typically, the MOSFET is a three-terminal device with gate (G), drain (D) and source (S) terminals.
MOSFETs feature three pins - Source, Gate and Drain. They effectively control the electrical current flowing between the Source and Drain contacts, with voltage being applied via the Gate. You can prompt the appearance or disappearance of an electrical channel by altering the electrical voltage.

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MOSFET Intro refers to the introductory guidelines and regulations pertaining to Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), which are critical components used in electronic designs.
Individuals or organizations involved in the design, manufacturing, or research related to MOSFET technology may be required to file MOSFET Intro documentation.
To fill out MOSFET Intro, one must provide accurate technical specifications, operational parameters, and any relevant data required by regulatory bodies or industry standards.
The purpose of MOSFET Intro is to ensure that all stakeholders comply with the required standards, facilitating safety, quality, and performance in electronic components.
The information that must be reported on MOSFET Intro includes electrical characteristics, manufacturing processes, quality control measures, and compliance with regulatory requirements.
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